Plasmatherm #2 - ta_nit1
in folder "recipe → gawlik → ta_nit.prc"
ta_nit1 Process
- CHF3 + O2 chemistry reference
- Process Gasses
- CHF3: 40 sccm
- O2: 10 sccm
- Pressure: 60 mTorr (limited by low vac diaphragm pump)
- RF power: 400 W
- Etch Rates
- Si3N4:
, multiple selections available,