System Bravo Junk Growth Temps
HTS bake the Si wafer at 450C. Don't Away bake on the CAR, and don't heat it above 200C on the CAR. The wafer is just there so you're not coating the beam flux. You don't want to heat the wafer and redeposit the junk all over the rest of the system. I (Scott Maddox) think it makes sense while heating up the cells to have the Si wafer on the block facing the cells, and have the shutters open. Then, during the junk growth, you can actuate the shutters closed and open a few times (with several minutes in each position) to heat the shutters.
Eurotherm | Temperature |
|---|---|
As Sub | 415C |
As Cracker | 900C |
Sb Sub | 65% (~536C) |
Sb Cracker | 950C |
In Tip | 950C (depends on InTip growth temp and InTip-InBase temp) |
In Base | Let AMBER do it |
Ga Tip | 1070C (depends on GaTip growth temp and GaTip-GaBase temp) |
Ga Base | Let AMBER do it |
Bi Tip | 685C (depends on BiTip growth temp) |
Bi Base | Let AMBER do it |
Er | 1050C |
Si | 1350C |
Be | 1100C |
GaTe | 540C |
N | 150W RF |
Al | ???? |