System Bravo is the LASE groups Dilute Nitrides and erbium-based compounds machine. Current projects include the mid-IR laser, the Tunnel Junction Process Flow, and ErAs films.

System Bravo: The system on the left is Bravo, System Echo is connected in vacuum on the right.

Sources

Antimony Cracker
400g Ga Sumo
200g Al Sumo
Arsenic Cracker
Nitrogen Plasma Source
Erbium
Dual dopant
GaTe
Atomic Hydrogen Station

Junk Growths

Bravo requires two junk growths when bringing up the system. One pre-melting aluminum and one post-melting aluminum. More details are given here: Bravo_MBE_Junk_Growth

Standard Quantum Well

Data and explanation for Bravo std. quantum well during system bring up

Doping Calibrations

Growth Computer

TBD

Source PID Values

Reference: Adjusting Source Cell PID Values

'Low Temperature / Default PID values !'

Source Cell	Pb	ti	td	Target Temperature (C)	Ramp Rate
InTip 900g SUMO	80	105	17	350	5
InBase 900g SUMO	71	1107	184	175	5
InTip 400g SUMO	300	50	1	350	10
InBase 400g SUMO	250	75	3	200	10
GaTip	250	150	5	350	10
GaBase	100	100	5	200	10
AlBase	300	150	5	200	10
BiTip	57	37	2	600	10
BiBase	47.8	55	9	550	10
Er	150	75	5	350	5
Si	620	80	2	350	100
Be	620	80	2	350	100
GaTe	150	200	10	350	100
AsSub	125	150	35	345	2
AsCracker	250	150	5	850	30
SbSub	200	150	35	345	2
SbCracker	200	75	0	850	30
Substrate	100	100	5	200	60
BufferHTS	110	110	5	200	30
LC Lamp	106	38	6	500	60

Note: Only the first (low temperature) set of PID values can be read or written through AMBER. If gain scheduling is enabled, the second (high temperature) set of PID values must be read and written directly from the Eurotherm.

Updates: 220301: Adjusted Sb cracker from PID 54,17,2 to PID 200,75,0. Original wiki values say 250,70,5

'High Temperature PID values (Gain Scheduling must be enabled) !'

Source Cell	Pb2	ti2	td2	Target Temperature (C)	G.SP (C)
InTip 900g SUMO	65	17	2	875	700
InBase 900g SUMO	30	113	30	700	500
GaTip	39	360	60	1000	700
GaBase	38.9	360	60	850	550
Si	470	12	2	~1000	700
Be	470	12	2	~800	60