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Photoresist Recipes

Photoresist Recipes

Jul 27, 2022

Photoresist should have some time to warm up before using.

Always remember to put them back in the fridge!!

g-line wavelength 436 nm; i-line wavelength 365 nm; I think our litho tools are i-line.

  • AZ 5214, cover slide sample adhesion

    • 6 drops of PR on cover slide

    • Spin 1min @ 1K RPM

    • No bake, place the sample to be mounted on the center of the cover slide quickly after the spin finishes

    • Gently push the sample corners as the PR dries (should be able to see rainbows from the backside of the cover slide)

  • AZ 5214, positive

    • Spin 1min @ 3K RPM (around 1.7 um thickness)

    • Bake 1min @ 110 degree C

    • Exposure 13s @ CL1 (7.5 mW)

    • Develop 45s @ AD10/MF26A (develop time may vary?)

  • AZ 2020, negative

    • Spin 1min @ 4.5k RPM (around 2um thickness)

    • Bake 1min @ 110 degree C

    • Exposure 5.5s - 6s @ CL1 (7.5 mW)

    • Bake 1min @ 110 degree C

    • Develope 30s @ AD10/MF26A 

  • SPR 220, positive, datasheet

    • Courtesy of Prof. Ruochen Lu

    • Spin 1min @ 3k RPM (around 5um thickness)

    • 1st pre-bake 2min @ 60 degree C

    • 2nd pre-bake 1min @ 115 degree C 

    • Exposure 45s @ CL1 (7.5 mW). This is about 340 mJ/cm^2 dose.

    • Develope 2min @ MF26A

  • Photolithography for Thermal Deposition

    Note: This recipe is built for Cr/In (40/500 nm) deposition at Denton evaporator. It is different from typical e-beam

  • evaporation becaus

  • e of the use of a lift-off resist (LOR, PMGI SF6) and using PG remover (instead of a Kwikstrip remover). It takes about 20 minutes for total lift-off

    Spin-coating and pre-baking

    1. Clean the sample in acetone and IPA

    2. Spin-coat PMGI-SF6 (LOR) on the sample at 2.5K-3K (RPM) for 40 seconds

    3. Bake the sample at 190o C for 5 minutes

    4. Spin-coat AZ-5214 on the sample at 3K (RPM) for 1 min

    5. Bake the sample at 110o C for 1 minute

    6. Use a foam Q-tip dipped in acetone for edge-bead removal

     

    Exposure and Developing

    1. Expose the sample to UV light for 15 seconds (365 nm)

    2. Develop the sample in AD-10 for 2:30 minutes (30 sec for the PR and 2 min to develop and undercut the LOR) – Be sure to do an agitated developing

    3. Descum the sample for 1 min at Oxford RIE (20 sccm O2 80 RF power)

  • NR9-500p negative resist

Spin at 3k RPM for 40 sec
Pre-bake at 70C for 3 min
Expose 12 sec MA6 Cl1
Post-bake at 100C for 3 min
Develop for 10 sec in MF-26A / AD10