System Echo Junk Growth Temps
Junk Growth Temperatures
|Border =1
|As Sub
|30% (manual)
|-
|As Cracker
|900C
|-
|Bi Tip
|650C
|-
|Bi Base
|600C
|-
|In Tip
|950C
|-
|In Base
|800C
|-
|Ga Tip
|1090C
|-
|Ga Base
|960C
|-
|Lu
|1340C
|-
|Si
|1300C
|-
|Be
|1100C
|-
|B
|TBD
|}
Rough Procedure
The heating up of the substrate is being contested
turn on RGA, and make sure logging is enabled
face CAR down, and ramp up to 800 C
One by One, ramp up all cells to 200C with shutter open
Make sure that AsValve is open to 50 mil
Ramp up As Cracker to 900C (or target temp)
Ramp up As sub to 330C (or target temp)
While As sub is ramping up to 330C, one by one, ramp up all cells to 500C with shutter open, then to ~100C below growth temp with shutter closed
Once As sub is stable at 380C, recalibrate home position, then close to some value? (actually, we need to go hotter than 380C)
Turn CAR to growth position, and bring all cells to junk growth temp simultaneously. Junk growth temp is ~50C above growth temp.
Notes: Bravo junk growth temps are on wiki. Use 175C difference between tip and base of Ga (tip higher). Use 200C difference between tip and base of In (tip higher). These can be configured in AMBER.
Be sure to write down times for each cell being heated so we can compare RGA scans.
Junk growth for at least 1 hour. Keep shutters open up to 500C so crap can get out. Then close them down to heat and outgas the shutters.
Grow on a full 3" silicon wafer. Don't rotate the wafer during junk growth, that way deposition uniformity can be tested (be sure to note the wafer's rotation position before pulling it off the CAR).