System Echo

System Echo

Echo system is currently our As,P machine as well as studies involving bismuth and boron. Current projects include overgrowth and B-III-V alloys...etc.

Sources:

  • Ga

  • In

  • B e-beam (formerly upward looking Bi)

  • As

  • Bi (formerly Gd)

  • Valved GaP cell (formerly La)

  • Veeco dual dopant with GaTe, broken bird cage and broken shutter (formerly MBE K Si, Be)

  • Triple Dopant (formerly GaTe, formerly Lu)

Doping Calibrations

Growth Computer

Note, this is extremely out of date as we're now using a MOXA coms board. Will update soon -KMM - lies

Rocket Ports

  • RP 0 - As Sub, As Cracker, Null, Gd, Bi, LC Lamp; Bake 1; Bake 2; Bake 3; CAR and HS (Substrate and HTS)

  • RP 1 - As Valve

  • RP 2 - Cable without inputs (free)

  • RP 3 - B, Lu, Ga tip, Ga base, In tip, In base

  • RP 4 - Si, Be, Al, Bad

  • RP 5 - completely empty RP

  • RP 6 - Echo cryo monitor (gray phone cable)

  • RP 7 - CAR Controller (RS232)

  • RP 8 - GC IG SRS

  • RP 9 - BOS cryo monitor (gray phone cable)

  • RP 10 -BF IG SRS

Other Inputs

  • NI DAQ - BOS pressure (AI3 +r -b); Straight to cpu (AI0 +r -b), (AI1 +w -g)

  • RS232 from cpu to pyro controller (white)

Source PID Values

Reference:

Adjusting Source Cell PID Values

'Low Temperature / Default PID values !'

Source Cell

Pb

ti

td

Target Temperature (C)

Ramp Rate

InTip Default

300

50

1

350

10

InBase Default

250

75

3

200

10

GaTip Default

200

75

5

350

10

GaBase Default

200

190

5

200

10

BiTip

57

37

2

600

5

BiBase

47.8

55

9

550

5

La

150

75

5

1000

5

Lu

150

75

5

700

5

Si SUSI

75

96

10

800

50

Be

620

80

2

350

100

AsSub

125

150

35

345

100

AsCracker

250

70

5

850

100

Substrate

22.3

68

11

200

60

BufferHTS

128

158

26

200

30

Note: Only the first (low temperature) set of PID values can be read or written through AMBER. If gain scheduling is enabled, the second (high temperature) set of PID values must be read and written directly from the Eurotherm.

'High Temperature PID values (Gain Scheduling must be enabled) !'

Source Cell

Pb2

ti2

td2

Target Temperature (C)

G.SP (C)

InTip

41.8

9

2

900

700

InBase

45

17

5

750

550

GaTip

41.8

9

2

1000

700

GaBase

45

17

5

850

550

Si SUSI

N/A

N/A

N/A

N/A

1400

Be

470

12

2

~1000

700

Substrate

100

50

2

700

350

BufferHTS

110

100

5

700

30

Cell

P

I

D

Ramp

LC Lamp

106

38

6

60

Al

300

150

5

5