System Echo
Echo system is currently our As,P machine as well as studies involving bismuth and boron. Current projects include overgrowth and B-III-V alloys...etc.
Sources:
Ga
In
B e-beam (formerly upward looking Bi)
As
Bi (formerly Gd)
Valved GaP cell (formerly La)
Veeco dual dopant with GaTe, broken bird cage and broken shutter (formerly MBE K Si, Be)
Triple Dopant (formerly GaTe, formerly Lu)
Doping Calibrations
Growth Computer
Note, this is extremely out of date as we're now using a MOXA coms board. Will update soon -KMM - lies
Rocket Ports
RP 0 - As Sub, As Cracker, Null, Gd, Bi, LC Lamp; Bake 1; Bake 2; Bake 3; CAR and HS (Substrate and HTS)
RP 1 - As Valve
RP 2 - Cable without inputs (free)
RP 3 - B, Lu, Ga tip, Ga base, In tip, In base
RP 4 - Si, Be, Al, Bad
RP 5 - completely empty RP
RP 6 - Echo cryo monitor (gray phone cable)
RP 7 - CAR Controller (RS232)
RP 8 - GC IG SRS
RP 9 - BOS cryo monitor (gray phone cable)
RP 10 -BF IG SRS
Other Inputs
NI DAQ - BOS pressure (AI3 +r -b); Straight to cpu (AI0 +r -b), (AI1 +w -g)
RS232 from cpu to pyro controller (white)
Source PID Values
Reference:
Adjusting Source Cell PID Values
'Low Temperature / Default PID values !'
Source Cell | Pb | ti | td | Target Temperature (C) | Ramp Rate |
InTip Default | 300 | 50 | 1 | 350 | 10 |
InBase Default | 250 | 75 | 3 | 200 | 10 |
GaTip Default | 200 | 75 | 5 | 350 | 10 |
GaBase Default | 200 | 190 | 5 | 200 | 10 |
BiTip | 57 | 37 | 2 | 600 | 5 |
BiBase | 47.8 | 55 | 9 | 550 | 5 |
La | 150 | 75 | 5 | 1000 | 5 |
Lu | 150 | 75 | 5 | 700 | 5 |
Si SUSI | 75 | 96 | 10 | 800 | 50 |
Be | 620 | 80 | 2 | 350 | 100 |
AsSub | 125 | 150 | 35 | 345 | 100 |
AsCracker | 250 | 70 | 5 | 850 | 100 |
Substrate | 22.3 | 68 | 11 | 200 | 60 |
BufferHTS | 128 | 158 | 26 | 200 | 30 |
Note: Only the first (low temperature) set of PID values can be read or written through AMBER. If gain scheduling is enabled, the second (high temperature) set of PID values must be read and written directly from the Eurotherm.
'High Temperature PID values (Gain Scheduling must be enabled) !'
Source Cell | Pb2 | ti2 | td2 | Target Temperature (C) | G.SP (C) |
InTip | 41.8 | 9 | 2 | 900 | 700 |
InBase | 45 | 17 | 5 | 750 | 550 |
GaTip | 41.8 | 9 | 2 | 1000 | 700 |
GaBase | 45 | 17 | 5 | 850 | 550 |
Si SUSI | N/A | N/A | N/A | N/A | 1400 |
Be | 470 | 12 | 2 | ~1000 | 700 |
Substrate | 100 | 50 | 2 | 700 | 350 |
BufferHTS | 110 | 100 | 5 | 700 | 30 |
Cell | P | I | D | Ramp |
LC Lamp | 106 | 38 | 6 | 60 |
Al | 300 | 150 | 5 | 5 |