Wet Etch Recipes

Wet Etch Recipes

Wet chemical etching is most often either reaction speed limited (your acid & your material) or diffusion limited (mostly stirring, sometimes sample feature size if it's really small). The important note is that it is not as simple as dumping everything together and tossing your sample in the acid. It can come out not uniform or sometimes really rough

 

For some specific recipes, pay attention to the order of adding each acid!

 

If you don’t see a recipe for a material you are interested in etching, or you want to do something specific, it may be worth checking

 

Tips:

  • Use dipper baskets for easier control of the etching time, and rinse samples quickly after taking them out of the acid bath! 

  • Use a combination of water rinse beakers. When you remove a sample from acid etchant, do a two-step rinse. The first beaker removes most of the concentrated etchant and the second beaker removes the last of the now-diluted etchant.

  • Acids/Oxidizers have standard "initial concentrations", and are not noted repeatedly in the recipe table unless specified.
    If you find other recipes from the literature, be sure to check the concentration they used.

    • Citric acid (C6H8O7): anhydrous citric acid. We buy our own. This comes in small crystals so you need to mass out what you need to use.

    • H2O2: Hydrogen Peroxide, 35%. Supplied by MRC.

    • HCl: Hydrochloric Acid, 37%. Supplied by MRC.

    • HF: Hydrofluoric Acid, 49%. Supplied by MRC.

    • H3PO4: Phosphoric Acid, 85%. Used to be supplied by MRC, but we buy our own now.

  • Scale recipes accordingly if you need a larger volume bath

  • If the hydrogen peroxide is expired (check the label before using!) do not use it. Instead, put a waste label on the bottle, label it as “Hydrogen Peroxide, Expired - 100%” and put it next to the acid cabinet in the waste area. Get a new, unexpired bottle from the cabinet near the tube furnaces. Bad peroxide = bad etch (typically rough, uneven, and unpredictable).

 

Acids

Procedures

Usage/Materials

Etch Rate

Acids

Procedures

Usage/Materials

Etch Rate

Citric 

  • Citric: H2O: H2O2 =1g : 1mL : 0.2mL, scale accordingly

  • Add citric acid and water, mix @600 RPM for 15 minutes (or until clear, when all citric acid dissolves)

  • Add H2O2, mix @600 RPM for 15 minutes

GaAs/InAs/InAsSb.
This etch does not does etch high Al-containing layers or GaSb.

~100 nm/min

Phosphoric + Citric

(Chow Etch)

  • H2O: H3PO4: Citric: H2O2 = 120mL : 15mL : 20g : 15mL

  • Add acids and water, mix @600 RPM for 10-15 minutes (or until all citric acid has fully dissolved)

  • Add H2O2, mix @600 RPM for 10-15 minutes

GaAs/InAs/InAsSb, AlAsSb, and GaSb

~500 nm/min average etch rate

(~450 for GaSb)

HCl

  • Mix HCl and H2O, volume ratio = 1:5

  • (Optional?) Stir @400-600 RPM for 10 minutes

  • Sample dip to remove native oxide

 

Diluted HF

 

AlSb Undercut Etch

 

Piranha

 

Mask cleaning

 

Phosphoric+Hydrochloric

3:1 Phosphoric:HCl

60mL of H3PO4 and 20mL of HCl is enough to submerge a stir bar and a sample (in a teflon dipper basket) in a typical etch beaker.

Stir at 300-400 RPM.

InP, selective against InGaAs.

Etch rate is supposed to be 1µm/min, but may be slightly less.