Oxford RIE Logbook

Date User	Sample/Material	Recipe	Etch Time	Etch depth	Notes	Etch Rate	Signed
2021-08-03 Yinan	Dummy PECVD SiN @100 C (amc_sin4) x 15 min N GaAs	SJ SiN 150 nm/min	2min 30s	Fully removed	Estimate thickness is about 260 nm Looks greener than usual SiN grown on 250C for 15 minutes
			2min	Fully removed
			1min 45s	Fully removed
			1min 30s	Fully removed			Wang
2022-01	Dummy PECVD (new) SiN ywsin250 x 20min	SJ SiN 150 nm/min	3min	Fully removed	h = 570 nm		Wang
2022-01	Dummy PECVD (new) SiN ywsin250 x 20min	SJ SiN 150 nm/min	40s	130 nm	h = 440 nm; rate = 130 nm/0.667 min = 195 nm/min		Wang
2022-01	Dummy ywsin100 x 20min	SJ SiN 150 nm/min	4min	Fully removed	h = 710 nm		Wang
2022-01	Dummy ywsin100 x 20min	SJ SiN 150 nm/min	40s	330 nm	h = 380 nm; rate = 330 nm/0.667 min = 495 nm/min ?!?!
	Dummy ywsin100 x 8.5min	SJ SiN 150 nm/min	2min	280-300 nm	710/20*8.5 ~= 300 nm, so seems a reasonable result.		Wang
2022-03	Dummy aksio100 x 10min	DK SiO2 30 nm/min	3min	90-100 nm	need to check h0 and h1, but rate is quite accurately 30 nm/min		Wang
2022-03	MWIR HOT FPA SiO2: AKSIO130 x10 min ~ 600 nm	DK SiO2 30 nm/min But RF = 300	12 min	Fully removed	The original recipe RF is 200 so make sure to change	50 nm/min	Kamboj