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Oxford RIE Recipes

Oxford RIE Recipes

Mar 14, 2023

 

 

Name

Process Gases

Settings/Pressures

Etch Rates/Materials

Notes

Name

Process Gases

Settings/Pressures

Etch Rates/Materials

Notes

PCL O2 Clean

O2: 50sscm

Strike:

Set:

RF Power:

Removes PR

Run before and after descum/etch processes. Could also use different clean recipes.

Also useful for removing PR after hard mask etching

PCL O2 Etch

O2: 20sssm

Strike:

Set:

RF Power:

Descums/Removes PR

Run to descum PR to get better results for gratings.

4 minutes is a good starting time if you are working with sub-micron features, but you can add more time in increments of 1-2 minutes if it doesn't look good.

SJ SiN 150nm/min

 

 

SiNx 150nm/min

 

DK SiO2 30nm/min

 

 

SiO2 30nm/min