Oxford RIE Recipes
| Name | Process Gases | Settings/Pressures | Etch Rates/Materials | Notes |
|---|---|---|---|---|
| PCL O2 Clean | O2: 50sscm | Strike: Set: RF Power: | Removes PR | Run before and after descum/etch processes. Could also use different clean recipes. Also useful for removing PR after hard mask etching |
| PCL O2 Etch | O2: 20sssm | Strike: Set: RF Power: | Descums/Removes PR | Run to descum PR to get better results for gratings. 4 minutes is a good starting time if you are working with sub-micron features, but you can add more time in increments of 1-2 minutes if it doesn't look good. |
| SJ SiN 150nm/min | SiNx 150nm/min | |||
| DK SiO2 30nm/min | SiO2 30nm/min |
, multiple selections available,