Oxford RIE Recipes

Oxford RIE Recipes



NameProcess GasesSettings/PressuresEtch Rates/MaterialsNotes
PCL O2 CleanO2: 50sscm

Strike:

Set:

RF Power:

Removes PR

Run before and after descum/etch processes. Could also use different clean recipes.

Also useful for removing PR after hard mask etching

PCL O2 EtchO2: 20sssm

Strike:

Set:

RF Power:

Descums/Removes PR

Run to descum PR to get better results for gratings.

4 minutes is a good starting time if you are working with sub-micron features, but you can add more time in increments of 1-2 minutes if it doesn't look good.

SJ SiN 150nm/min

SiNx 150nm/min
DK SiO2 30nm/min

SiO2 30nm/min