PT#1L Recipes

PT#1L Recipes

Plasmatherm #1 system got a full wipe around the last quarter of 2021. This is a good story to tell us that it's better to record recipes rather than just use them without knowing what they consist of.
It's also a reminder that the rates are just references. The same SiNx deposition recipe can give 550 nm in 30 minutes before the computer wipe, but 570 nm in 20 minutes after the computer wipe.

Each Plasmatherm #1 recipe roughly follows thiis pattern: Initial - Purge - Evac - Purge - Evac - Process1 -Process2 - Purge - Evac - Purge - Evac - End (*need to double check)
Initial mostly sets the recipe temperature.
Purge - Evac is a combo that refreshes the gas environment in the chamber. Before Processes, it is important because it gets rid of any potential unwanted gas messing up your process reaction. After Processes, it is important because it gets rid of any potential harmful byproducts of your process reaction.
Process1 and Process2 usually have the same gas flow, the difference is that Process1 does not turn on RIE RF power and is mostly for stabilizing the gases. After the gas flow stabilizes, Process2 turns on the RIE RF power. The duration of Process2 is essentially the duration of your reaction, so it is usually set to variable time.

 

Recipe location & name

Temperature (Celcius)

Set pressure (mTorr)

Gases

RF power

Reference rate

Recipe location & name

Temperature (Celcius)

Set pressure (mTorr)

Gases

RF power

Reference rate

recipes/ywsin250

250

580

NH3  = 10
N2    = 500
SiH4 =  40

60

570 nm/20 min

recipes/ywsin100

100

580

NH3 = 10
N2    = 500
SiH4 = 40

60

710 nm/20 min

recipes/aksio100

100

300

N2O = 50
SiH4 = 23

50

70-80 nm/min

Update 2/21/2025: ~62nm/min, or 1nm/second

etch with: DK SiO2 30nm/min