10 Etching device side aluminum oxide

a. AMI clean followed by Asher Nordson March PX-250 to clear organic material
from device side of wafer.
b. 10 µm AZ 9260 Photoresist Recipe – Front side Pattern
c. ICP Oxford 100 Etcher
Recipe: Al2O3 BCl3 Ar Etch. Etch until silicon layer below is visible.

Usually 35-45mins depens on al2o3 thickness.(2000 cycle Al2O3 ALD deposite)