7 Etching backside polysilicon and silicon nitride layer
a. AMI clean.
b. 2 µm thick AZ 1518 Photoresist Recipe on device side up to exposure step.
c. Etcher RIE 790 PlasmaTherm
Recipe: same as for device side.
, multiple selections available,
a. AMI clean.
b. 2 µm thick AZ 1518 Photoresist Recipe on device side up to exposure step.
c. Etcher RIE 790 PlasmaTherm
Recipe: same as for device side.