8 Aluminum oxide hard mask

a. AMI clean followed by PVA TePla 300 Microwave Plasma asher to clear
organic material from both sides of wafer.
b. Cambridge NanoTech SavannahTM 200 ALD
Recipe: Al2O3. Deposition rate is 1.1 A/cycle. Deposit around 200 nm(al2o3 get etched during DSE process and ratio speed is Al2o3:Si=:1:3000.
Note: need to use glass slide to prop up the wafer in the chamber so that the backside gets deposited with Al2O3 as well. 

Make sure you check the impulse like this when process starts otherverse you may forget the valve!