4 Etching polysilicon layer

a. Piranha clean if necessary. Otherwise Acetone + Methanol + Isopropanol
Alcohol (AMI) clean.
b. 2 µm thick AZ 1518 Photoresist Recipe – Polysilicon Pattern
i. YES HMDS Oven.
ii. Programmable Spinner. 500 RPM, 1000 Ramp, 5 s. 3500 RPM, 1000
Ramp, 30 s.
iii. Hotplate. 115 ⁰C, 4 min.
iv. Delay 10 min.
v. Karl Suss MA6 Mask Aligner. 365 nm, 7.5 mW, hard contact, 15 µm
alignment gap, 21 s exposure.
vi. Hotplate. 115 ⁰C, 30 s.
vii. MF 26A Developer. 30 s.
viii. Hotplate. 115 ⁰C, 2 min.
c. Etcher RIE 790 PlasmaTherm
Recipe: Silow2. Process time: 4 min.
Notes: If not etched through, add time until nitride layer is visible. Use kapton
tape to secure wafer within chamber.