AZ 9260 (10un thickness)

10 µm AZ 9260 Photoresist Recipe 

i. YES HMDS Oven.
ii. Programmable Spinner. 500 RPM, 1000 Ramp, 5 s. 2000 RPM, 1000
Ramp, 45 s.
iii. Hotplate. 115 ⁰C, 4 min.
iv. Rehydration. Submerge wafer in DI wafer for 15 mins.
v. Karl Suss MA6 Mask Aligner. Backside alignment. 365 nm, 7.5 mW,
hard contact, 25 µm alignment gap, 125 s exposure.
vi. AZ 400K Developer diluted 1:4. 5-6.5 min development. Increase time
if necessary.
vii. Hard bake. 20 min 90 ⁰C hotplate.

Note: Take out bottle containing photoresist from fridge, open lid to equalize
pressure and reseal, and rest in room temperature for half an hour prior to spin.
Prepare developer solution beforehand. Pour photoresist instead of using pipet.
Hard bake temperature higher than 90 ⁰C tend to cause rounding of features.
EVG 620 Mask Aligner can be used alternatively to MA6 for potentially better
backside alignment.